Part Number Hot Search : 
78R05F XN4601 VN05HSP SF1174B 74ALS 2JFHT 8E222 LT1533
Product Description
Full Text Search
 

To Download 2SB6240712 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  bl galaxy electrical production specification silicon epitaxial planar transistor 2sb624 document number: bl/ssstc014 www.galaxycn.com rev.a 1 features z high dc current gain.h fe : 200typ (v ce =-1.0v,i c =-100ma) z complimentary to the 2sd596. applications z audio frequency amplifier. z switching appilication. sot-23 ordering information type no. marking package code 2sb624 bv1/bv2/bv3/bv4/bv5 sot-23 maximum rating @ ta=25 unless otherwise specified symbol parameter value units v cbo collector-base voltage -30 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -700 ma p c collector dissipation 200 mw t j, t stg junction and storage temperature -55~150 electrical characteristics @ ta=25 unless otherwise specified pb lead-free
bl galaxy electrical production specification silicon epitaxial planar transistor 2sb624 document number: bl/ssstc014 www.galaxycn.com rev.a 2 parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e =-100 a,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-1v,i c =-100ma v ce =-1v,i c =-700ma 110 50 200 400 collector-emitter saturation voltage v ce(sat) i c =-700ma, i b =-70ma -0.25 -0.6 v base-emitter voltage v be(on) v ce =-6v,i c =10ma -0.7 v transition frequency f t v ce =-6v, i c =-10ma 160 mhz collector output capacitance c ob v cb =-6v,i e =0,f=1mhz 17 pf classification of h fe(1) range 110-180 135-220 170-270 200-320 250-400 marking bv1 bv2 bv3 bv4 bv5
bl galaxy electrical production specification silicon epitaxial planar transistor 2sb624 document number: bl/ssstc014 www.galaxycn.com rev.a 3 typical characteristics @ ta=25 unless otherwise specified
bl galaxy electrical production specification silicon epitaxial planar transistor 2sb624 document number: bl/ssstc014 www.galaxycn.com rev.a 4 package outline plastic surface mounted package sot-23 soldering footprint unit : mm package information sot-23 dim min max a 2.85 2.95 b 1.25 1.35 c 1.0typical d 0.37 0.43 e 0.35 0.48 g 1.85 1.95 h 0.02 0.1 j 0.1typical k 2.35 2.45 all dimensions in mm device package shipping 2sb624 sot-23 3000/tape&reel


▲Up To Search▲   

 
Price & Availability of 2SB6240712

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X